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| JMnic Product Specification Silicon PNP Power Transistors 2SA1396 DESCRIPTION With TO-220Fa package Complement to type 2SC3568 Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulse) Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -10 -20 -5 30 150 -55~150 ae ae UNIT V V V A A A W JMnic Product Specification Silicon PNP Power Transistors 2SA1396 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-5A;IB=-0.5A;L=1mH IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VCE=-100V; RBE=51| Ta=125ae ; MIN -100 -0.6 -1.5 -10 -1 -0.01 -1 -10 40 40 20 200 200 |I |I TYP. MAX UNIT V V V A mA mA A SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICER ICEX IEBO hFE-1 hFE-2 hFE-3 VCE=-100V;VBE(off)=1.5V Ta=125ae VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-5A ; VCE=-5V Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A ;IB1=-IB2=-0. 5A VCCO 50V;RL=10| 0.5 1.5 0.5 |I |I |I s s s hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1396 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1396 4 |
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